Ultraviolet emissions realized in ZnO via an avalanche multiplication process

	Ultraviolet emissions realized in ZnO via an avalanche multiplication process
	Yu J.; Shan C. X.; Shen H.; Zhang X. W.; Wang S. P.; Shen D. Z.
	2013
发表期刊	Chinese Physics B
ISSN	ISBN/1674-1056
卷号	22 期号:7
摘要	Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer. Thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The reported results demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, and so may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issue of ZnO.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/40922
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu J.,Shan C. X.,Shen H.,et al. Ultraviolet emissions realized in ZnO via an avalanche multiplication process[J]. Chinese Physics B,2013,22(7).
APA	Yu J.,Shan C. X.,Shen H.,Zhang X. W.,Wang S. P.,&Shen D. Z..(2013).Ultraviolet emissions realized in ZnO via an avalanche multiplication process.Chinese Physics B,22(7).
MLA	Yu J.,et al."Ultraviolet emissions realized in ZnO via an avalanche multiplication process".Chinese Physics B 22.7(2013).

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