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Ultraviolet photodetectors based on wide bandgap oxide semiconductor films
C.Q.Zhou; Q.Ai; X.Chen; X.H.Gao; K.W.Liu; D.Z.Shen
2019
发表期刊Chinese Physics B
ISSN1674-1056
卷号28期号:4页码:11
摘要Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga2O3, TiO2, and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.
关键词Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics
DOI10.1088/1674-1056/28/4/048503
收录类别SCI ; EI
语种英语
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/62738
专题中国科学院长春光学精密机械与物理研究所
推荐引用方式
GB/T 7714
C.Q.Zhou,Q.Ai,X.Chen,et al. Ultraviolet photodetectors based on wide bandgap oxide semiconductor films[J]. Chinese Physics B,2019,28(4):11.
APA C.Q.Zhou,Q.Ai,X.Chen,X.H.Gao,K.W.Liu,&D.Z.Shen.(2019).Ultraviolet photodetectors based on wide bandgap oxide semiconductor films.Chinese Physics B,28(4),11.
MLA C.Q.Zhou,et al."Ultraviolet photodetectors based on wide bandgap oxide semiconductor films".Chinese Physics B 28.4(2019):11.
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