Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

	Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs
其他题名	论文其他题名
	Li D. B.; Hu W. G.; Hideto M.; Kazumasa H.; Song H.
	2010
发表期刊	Chinese Physics B
ISSN	1674-1056
卷号	19 期号:12
摘要	Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26117
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li D. B.,Hu W. G.,Hideto M.,et al. Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs[J]. Chinese Physics B,2010,19(12).
APA	Li D. B.,Hu W. G.,Hideto M.,Kazumasa H.,&Song H..(2010).Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs.Chinese Physics B,19(12).
MLA	Li D. B.,et al."Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs".Chinese Physics B 19.12(2010).

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