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| Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文 Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5 作者: Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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| Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation 期刊论文 Applied Physics Letters, 2016, 卷号: 109, 期号: 20 作者: Wang, D. ; D. Han; X. B. Li; S. Y. Xie; N. K. Chen; W. Q. Tian; S. B. Zhang and H. B. Sun
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| The real role of active-shell in enhancing the luminescence of lanthanides doped nanomaterials 期刊论文 Applied Physics Letters, 2013, 期号: 102 作者: Wu F.; Liu X.; Kong X.; Zhang Y. ; Tu L.; Liu K.; Song S.; Zhang H.
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| Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu 期刊论文 Applied Physics Letters, 2010, 卷号: 97, 期号: 14 作者: Pan H. L.; Yao B.; Yang T.; Xu Y.; Zhang B. Y.; Liu W. W.; Shen D. Z.
Adobe PDF(380Kb)  |   收藏  |  浏览/下载:573/152  |  提交时间:2012/10/21 |
| Investigation on the formation mechanism of p-type Li-N dual-doped ZnO 期刊论文 Applied Physics Letters, 2010, 卷号: 97, 期号: 22 作者: Zhang B. Y.; Yao B.; Li Y. F.; Zhang Z. Z.; Li B. H.; Shan C. X.; Zhao D. X.; Shen D. Z.
Adobe PDF(777Kb)  |   收藏  |  浏览/下载:792/72  |  提交时间:2012/10/21 |
| Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb 期刊论文 Applied Physics Letters, 2009, 卷号: 95, 期号: 2 作者: Qin J. M.; Yao B.; Yan Y.; Zhang J. Y.; Jia X. P.; Zhang Z. Z.; Li B. H.; Shan C. X.; Shen D. Z.
Adobe PDF(430Kb)  |   收藏  |  浏览/下载:539/105  |  提交时间:2012/10/21 |
| Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy 期刊论文 Applied Physics Letters, 2009, 卷号: 95, 期号: 19 作者: Li X. H.; Xu H. Y.; Zhang X. T.; Liu Y. C.; Sun J. W.; Lu Y. M.
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| Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires 期刊论文 Applied Physics Letters, 2008, 卷号: 92, 期号: 7 作者: Shan C. X.; Liu Z. ; Hark S. K.
Adobe PDF(594Kb)  |   收藏  |  浏览/下载:448/126  |  提交时间:2012/10/21 |
| High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer 期刊论文 Applied Physics Letters, 2008, 卷号: 92, 期号: 25 作者: Yang D. F.; Li W. L.; Chu B.; Zhang D. Y.; Zhu J. Z.; Su Z. S.; Su W. M.; Han L. L.; Bi D. F.; Chen Y. R.; Yan F.; Liu H. H.; Wang D.![](/image/person.jpg)
Adobe PDF(487Kb)  |   收藏  |  浏览/下载:543/89  |  提交时间:2012/10/21 |
| Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes 期刊论文 Applied Physics Letters, 2007, 卷号: 90, 期号: 1 作者: Xu S. F.; Fan Y. ; Luo J. S.; Zhang L. G.; Wang W. Q.; Yao B.; An L. N.
Adobe PDF(444Kb)  |   收藏  |  浏览/下载:798/177  |  提交时间:2012/10/21 |