Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu

	Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu
其他题名	论文其他题名
	Pan H. L.; Yao B.; Yang T.; Xu Y.; Zhang B. Y.; Liu W. W.; Shen D. Z.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:14
摘要	Single wurtzite p-type Zn(1-y)Cu(y)O(1-x)S(x) alloy films with 0.081 <= x <= 0.186 and 0.09 <= y <= 0.159 were grown on quartz reproducibly by magnetron sputtering. The alloys show very stable p-type conductivity with a hole concentration of 4.31-5.78 x 10(19) cm(-3), a resistivity of 0.29-0.34 Omega cm and a mobility of 0.32-0.49 cm(2) V(-1) s(-1). The p-type conductivity is attributed to substitution of Cu(+1) for the Zn site, and the ionization energy of the Cu(+1) acceptor is measured to be 53 meV, much less than that of Cu-doped ZnO reported previously. The small ionization energy is due to Cu heavy doping and increase in valence band maximum of ZnO induced by alloying with S. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496038]
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24770
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Pan H. L.,Yao B.,Yang T.,et al. Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu[J]. Applied Physics Letters,2010,97(14).
APA	Pan H. L..,Yao B..,Yang T..,Xu Y..,Zhang B. Y..,...&Shen D. Z..(2010).Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu.Applied Physics Letters,97(14).
MLA	Pan H. L.,et al."Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu".Applied Physics Letters 97.14(2010).

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