Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Investigation on the formation mechanism of p-type Li-N dual-doped ZnO | |
其他题名 | 论文其他题名 |
Zhang B. Y.; Yao B.; Li Y. F.; Zhang Z. Z.; Li B. H.; Shan C. X.; Zhao D. X.; Shen D. Z. | |
2010 | |
发表期刊 | Applied Physics Letters
![]() |
ISSN | 0003-6951 |
卷号 | 97期号:22 |
摘要 | Lithium and nitrogen dual-doped ZnO films [ZnO:(Li,N)] with Li concentrations of 0%-11.2% were grown on sapphire by plasma-assisted molecular beam epitaxy, and a stable p-type ZnO:(Li, N) film was obtained by doping 6.1% of Li. The p-type conductivity of ZnO:(Li, N) is attributed to the formation of the Li(i)-N(O) complex, which depresses the compensation of Li(i) donor for Li(Zn) acceptor and the generation of (N(2))(O) donors. It is demonstrated that the Lii-NO complex can form an impurity band above the valance band maximum, resulting in a decrease in the ionization energy of the acceptor and an improvement in the conductivity and stability of the p-type ZnO:(Li, N). (C) 2010 American Institute of Physics. [doi:10.1063/1.3518059] |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26153 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang B. Y.,Yao B.,Li Y. F.,et al. Investigation on the formation mechanism of p-type Li-N dual-doped ZnO[J]. Applied Physics Letters,2010,97(22). |
APA | Zhang B. Y..,Yao B..,Li Y. F..,Zhang Z. Z..,Li B. H..,...&Shen D. Z..(2010).Investigation on the formation mechanism of p-type Li-N dual-doped ZnO.Applied Physics Letters,97(22). |
MLA | Zhang B. Y.,et al."Investigation on the formation mechanism of p-type Li-N dual-doped ZnO".Applied Physics Letters 97.22(2010). |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Zhang-2010-Investiga(777KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论