Investigation on the formation mechanism of p-type Li-N dual-doped ZnO

	Investigation on the formation mechanism of p-type Li-N dual-doped ZnO
其他题名	论文其他题名
	Zhang B. Y.; Yao B.; Li Y. F.; Zhang Z. Z.; Li B. H.; Shan C. X.; Zhao D. X.; Shen D. Z.
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:22
摘要	Lithium and nitrogen dual-doped ZnO films [ZnO:(Li,N)] with Li concentrations of 0%-11.2% were grown on sapphire by plasma-assisted molecular beam epitaxy, and a stable p-type ZnO:(Li, N) film was obtained by doping 6.1% of Li. The p-type conductivity of ZnO:(Li, N) is attributed to the formation of the Li(i)-N(O) complex, which depresses the compensation of Li(i) donor for Li(Zn) acceptor and the generation of (N(2))(O) donors. It is demonstrated that the Lii-NO complex can form an impurity band above the valance band maximum, resulting in a decrease in the ionization energy of the acceptor and an improvement in the conductivity and stability of the p-type ZnO:(Li, N). (C) 2010 American Institute of Physics. [doi:10.1063/1.3518059]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26153
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang B. Y.,Yao B.,Li Y. F.,et al. Investigation on the formation mechanism of p-type Li-N dual-doped ZnO[J]. Applied Physics Letters,2010,97(22).
APA	Zhang B. Y..,Yao B..,Li Y. F..,Zhang Z. Z..,Li B. H..,...&Shen D. Z..(2010).Investigation on the formation mechanism of p-type Li-N dual-doped ZnO.Applied Physics Letters,97(22).
MLA	Zhang B. Y.,et al."Investigation on the formation mechanism of p-type Li-N dual-doped ZnO".Applied Physics Letters 97.22(2010).

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