Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb

	Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb
其他题名	论文其他题名
	Qin J. M.; Yao B.; Yan Y.; Zhang J. Y.; Jia X. P.; Zhang Z. Z.; Li B. H.; Shan C. X.; Shen D. Z.
	2009
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	95 期号:2
摘要	Stable p-type Sb-doped ZnO (ZnO:Sb) was fabricated reproducibly by sintering mixture of ZnO and Sb(2)O(3) powders under 5 GPa at temperatures of 1100-1450 degrees C. The best p-type ZnO:Sb with resistivity of 1.6x10(-2) cm, carrier concentration of 3.3x10(20) cm(-3), and mobility of 12.1 cm/V s was obtained by doping 4.6 at. % Sb and sintering at 1450 degrees C. The p-type conduction is due to complex acceptor formed by one substitutional Sb at Zn site and two Zn vacancies. The acceptor level was measured to be 113 meV. Effect of pressure on formation and electrical properties of the p-type ZnO:Sb is discussed.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26280
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Qin J. M.,Yao B.,Yan Y.,et al. Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb[J]. Applied Physics Letters,2009,95(2).
APA	Qin J. M..,Yao B..,Yan Y..,Zhang J. Y..,Jia X. P..,...&Shen D. Z..(2009).Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb.Applied Physics Letters,95(2).
MLA	Qin J. M.,et al."Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb".Applied Physics Letters 95.2(2009).

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