Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires

	Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires
其他题名	论文其他题名
	Shan C. X.; Liu Z.; Hark S. K.
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	92 期号:7
摘要	We report temperature dependent photoluminescence studies on phosphorus doped ZnO nanowires. The shape of the spectra is very similar to those of phosphorus doped ZnO films. The photoluminescence spectrum at 10 K is dominated by neutral acceptor bound exciton (A (0)X) emissions. The acceptor binding energy determined also agrees with the corresponding value in phosphorus doped films. Studies on the A (0)X intensity show two quenching channels, associated with the thermal dissociations of A (0)X to a free exciton and of shallow residual donors. The residual donors revealed provide a clue for the difficulty in p doping of ZnO. (C) 2008 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26370
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shan C. X.,Liu Z.,Hark S. K.. Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires[J]. Applied Physics Letters,2008,92(7).
APA	Shan C. X.,Liu Z.,&Hark S. K..(2008).Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires.Applied Physics Letters,92(7).
MLA	Shan C. X.,et al."Temperature dependent photoluminescence study on phosphorus doped ZnO nanowires".Applied Physics Letters 92.7(2008).

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