High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer

	High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer
其他题名	论文其他题名
	Yang D. F.; Li W. L.; Chu B.; Zhang D. Y.; Zhu J. Z.; Su Z. S.; Su W. M.; Han L. L.; Bi D. F.; Chen Y. R.; Yan F.; Liu H. H.; Wang D.
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	92 期号:25
摘要	The authors demonstrate a considerable increase in current efficiency of fac-tris(2-phenylpyridine) iridium doped phosphorescent organic green-light emitting diode in which a thin 4,7 dipheny-1,10-phenanthroline (Bphen) layer acts as a cleaving layer. As 4 nm Bphen layer divides the emitting layer (EML) into two sub-EMLs, a maximum current efficiency of 53 cd/A (corresponding to external efficiency quantum of 15%) is obtained, which is higher for 2.3 folds than that of the device without it, especially the current efficiency increases 64% over the reference device at a luminance of 40 000 cd/m(2). The increases are demonstrated to the high electron mobility and special energy level alignment of Bphen with 4,4'-N,N'-dicarbazole-biphenyl host. The efficiency improvement attributes to a higher exciton formation probability in the recombination zone and better balance of the carrier injection. The detail enhancement mechanism of the efficiency is also discussed. (c) 2008 American Institute of Physics.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24844
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang D. F.,Li W. L.,Chu B.,et al. High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer[J]. Applied Physics Letters,2008,92(25).
APA	Yang D. F..,Li W. L..,Chu B..,Zhang D. Y..,Zhu J. Z..,...&Wang D..(2008).High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer.Applied Physics Letters,92(25).
MLA	Yang D. F.,et al."High efficiency electrophosphorescence device using a thin cleaving layer in an Ir-complex doped emitter layer".Applied Physics Letters 92.25(2008).

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