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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
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Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载:201/58  |  提交时间:2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 797, 页码: 262-268
作者:  Y.X.Chen;  K.L.Li;  Z.W.Li;  S.Q.Hu;  X.J.Sun;  Z.M.Shi;  X.K.Liu
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Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Pressure-induced electron phase transitions of alpha-As2Te3 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 685
作者:  Zhang, Y. H.;  Y. M. Ma;  A. H. Geng;  C. Y. Zhu;  G. T. Liu;  Q. Tao;  F. F. Li;  Q. L. Wang;  Y. Li;  X. Wang and P. W. Zhu
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Effect of annealing on conductivity behavior of undoped zinc oxide prepared by rf magnetron sputtering 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 457, 期号: 1—2, 页码: 36-41
作者:  Xing G. Z.;  Yao B.;  Cong C. X.;  Yang T.;  Xie Y. P.;  Li B. H.;  Shen D. Z.
Adobe PDF(675Kb)  |  收藏  |  浏览/下载:702/188  |  提交时间:2012/10/21