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垂直腔面发射激光器研究进展 期刊论文
发光学报, 2020, 卷号: 41, 期号: 12, 页码: 1443-1459
作者:  张继业;  李雪;  张建伟;  宁永强;  王立军
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垂直腔面发射激光器  高功率  高速  高温  
AlGaN基宽禁带半导体光电材料与器件 期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 11, 页码: 2046-2067
作者:  贲建伟;  孙晓娟;  蒋科;  陈洋;  石芝铭;  臧行;  张山丽;  黎大兵;  吕威
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AlGaN基材料  外延生长  掺杂  紫外发光器件  紫外探测  
Band structure engineering through van der Waals heterostructing superlattices oftwo-dimensionaltransition metal dichalcogenides 期刊论文
Infomat, 2020, 卷号: 3, 期号: 2, 页码: 201-211
作者:  X. G. Zhao, Z. M. Shi, X. J. Wang, H. S. Zou, Y. H. Fu and L. J. Zhang
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Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
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大功率半导体激光器发展及相关技术概述 期刊论文
光学学报, 2020, 卷号: 41, 期号: 01, 页码: 191-200
作者:  宁永强;  陈泳屹;  张俊;  宋悦;  雷宇鑫;  邱橙;  梁磊;  贾鹏;  秦莉;  王立军
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激光器  半导体激光器  大功率  芯片技术  合束技术  
Development of structure and tuning ability of the luminescence of lead-free halide perovskite nanocrystals (NCs) 期刊论文
Chemical Engineering Journal, 2020
作者:  S. A. Khan,C. Li,A. Jalil,X. Xin,M. Rauf,J. Ahmed,M. A. M. Khan,B. Dong,J. Zhu and S. Agathopoulos
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Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate 期刊论文
Crystals, 2020, 卷号: 10, 期号: 7, 页码: 12
作者:  Y. Lei,H. Wan,B. Tang,S. Y. Lan,J. H. Miao,Z. H. Wan,Y. C. Liu and S. J. Zhou
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Research Progress of Vertical-cavity Surface-emitting Laser 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2020, 卷号: 41, 期号: 12, 页码: 1443-1459
作者:  J.-Y. Zhang,X. Li,J.-W. Zhang,Y.-Q. Ning and L.-J. Wang
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe(2)Heterostructures 期刊论文
Advanced Materials, 2020, 卷号: 32, 期号: 45, 页码: 7
作者:  Y. Chen;  L. S. Wu;  H. Xu;  C. X. Cong;  S. Li;  S. Feng;  H. B. Zhang;  C. J. Zou;  J. Z. Shang;  S. Y. A. Yang;  K. P. Loh;  W. Huang and T. Yu
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