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Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960
作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li
caj(1183Kb)  |  收藏  |  浏览/下载：380/82  |  提交时间：2020/08/24
Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：332/105  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：363/78  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience 期刊论文
Crystals, 2019, 卷号: 9, 期号: 4, 页码: 7
作者:  X.Y.Chen;  Z.Z.Zhang;  Y.Y.Zhang;  B.Yao;  B.H.Li;  Q.Gong
浏览  |  Adobe PDF(1213Kb)  |  收藏  |  浏览/下载：399/123  |  提交时间：2020/08/24
molecular beam epitaxy,ZnO,dopant,defects,x-ray photoelectron,optical-properties,thin-films  
Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 12, 页码: 4
作者:  Zhang, Jiye;  Zhang, Jianwei;  Zhang, Xing;  Ning, Yongqiang;  Zhu, Hongbo;  Hofmann, Werner;  Zhang, Jun;  Zeng, Yugang;  Huang, Youwen;  Xiang, Lei;  Liu, Yingying;  Qin, Li;  Wang, Lijun
浏览  |  Adobe PDF(798Kb)  |  收藏  |  浏览/下载：787/126  |  提交时间：2019/08/26
molecular-beam epitaxy  oxidation  growth  Physics  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：585/261  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science  
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：680/176  |  提交时间：2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core 期刊论文
Journal of Luminescence, 2018, 卷号: 198, 页码: 178-182
作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
浏览  |  Adobe PDF(628Kb)  |  收藏  |  浏览/下载：440/125  |  提交时间：2019/09/17
molecular-beam epitaxy  plasmon  Optics  
AlGaN photonics_recent advances in materials and ultraviolet devices 期刊论文
Advances in Optics and Photonics, 2018, 卷号: 10, 期号: 1, 页码: 43-110
作者:  Li, D. B.;  Jiang, K.;  Sun, X. J.;  Guo, C. L.
浏览  |  Adobe PDF(6543Kb)  |  收藏  |  浏览/下载：952/252  |  提交时间：2019/09/17
light-emitting-diodes  high-quality aln  temperature  stimulated-emission  2nd-order optical-response  atomic-layer epitaxy  vapor-phase epitaxy  z-scan measurement  p-type conduction  room-temperature  avalanche photodiodes  Optics  
Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
浏览  |  Adobe PDF(1069Kb)  |  收藏  |  浏览/下载：355/117  |  提交时间：2019/09/17
zinc oxide  p-type  self-compens-tion  doping  molecular-beam epitaxy  thin-films  room-temperature  mgzno films  diodes  nanoparticles  modulation  gan(0001)  inversion  epilayers  Physics