Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

doi:10.3390/cryst9040204

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	Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience
	X.Y.Chen; Z.Z.Zhang; Y.Y.Zhang; B.Yao; B.H.Li; Q.Gong
	2019
发表期刊	Crystals
ISSN	2073-4352
卷号	9 期号:4 页码:7
摘要	Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.
关键词	molecular beam epitaxy,ZnO,dopant,defects,x-ray photoelectron,optical-properties,thin-films
DOI	10.3390/cryst9040204
URL	查看原文
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63447
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X.Y.Chen,Z.Z.Zhang,Y.Y.Zhang,et al. Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience[J]. Crystals,2019,9(4):7.
APA	X.Y.Chen,Z.Z.Zhang,Y.Y.Zhang,B.Yao,B.H.Li,&Q.Gong.(2019).Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience.Crystals,9(4),7.
MLA	X.Y.Chen,et al."Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience".Crystals 9.4(2019):7.

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