High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

doi:10.1088/1674-1056/28/3/034202

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	High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
	J.-M.Shang; J.Feng; C.-A.Yang; S.-W.Xie; Y.Zhang
	2019
发表期刊	Chinese Physics B
ISSN	16741056
卷号	28 期号:3
摘要	The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 m in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 m wavelength operating near room temperature was achieved using a 3% output coupler. 2019 Chinese Physical Society and IOP Publishing Ltd.
关键词	Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors
DOI	10.1088/1674-1056/28/3/034202
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收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63084
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J.-M.Shang,J.Feng,C.-A.Yang,et al. High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. Chinese Physics B,2019,28(3).
APA	J.-M.Shang,J.Feng,C.-A.Yang,S.-W.Xie,&Y.Zhang.(2019).High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy.Chinese Physics B,28(3).
MLA	J.-M.Shang,et al."High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy".Chinese Physics B 28.3(2019).

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