Changchun Institute of Optics,Fine Mechanics and Physics,CAS
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy | |
J.-M.Shang; J.Feng; C.-A.Yang; S.-W.Xie; Y.Zhang | |
2019 | |
发表期刊 | Chinese Physics B
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ISSN | 16741056 |
卷号 | 28期号:3 |
摘要 | The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser (SDL) emitting near 2.0 m in an external cavity configuration are reported. The high quality epitaxial structure, grown on Te-doped (001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector (DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 m wavelength operating near room temperature was achieved using a 3% output coupler. 2019 Chinese Physical Society and IOP Publishing Ltd. |
关键词 | Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors |
DOI | 10.1088/1674-1056/28/3/034202 |
URL | 查看原文 |
收录类别 | SCI ; EI |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/63084 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | J.-M.Shang,J.Feng,C.-A.Yang,et al. High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. Chinese Physics B,2019,28(3). |
APA | J.-M.Shang,J.Feng,C.-A.Yang,S.-W.Xie,&Y.Zhang.(2019).High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy.Chinese Physics B,28(3). |
MLA | J.-M.Shang,et al."High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy".Chinese Physics B 28.3(2019). |
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