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High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：363/78  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers 期刊论文
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7
作者:  D.Quandt;  D.Arsenijevic;  A.Strittmatte;  D.H.Bimberg
浏览  |  Adobe PDF(1508Kb)  |  收藏  |  浏览/下载：264/86  |  提交时间：2020/08/24
Submonolayer (SML),quantum dot (QD),laser diode,high-speed modulation,quantum-well lasers,dot lasers,gain,threshold,Engineering,Physics,Optics  
InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
作者:  Yu, Qingnan;  Li, Xue;  Jia, Yan;  Lu, Wei;  Zheng, Ming;  Zhang, Xing;  Ning, Yongqiang;  Wu, Jian
浏览  |  Adobe PDF(591Kb)  |  收藏  |  浏览/下载：585/151  |  提交时间：2019/05/22
tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands  
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
浏览  |  Adobe PDF(404Kb)  |  收藏  |  浏览/下载：604/138  |  提交时间：2019/09/17
Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.;  Ning, Y. Q.;  Wang, L. J.
浏览  |  Adobe PDF(2963Kb)  |  收藏  |  浏览/下载：585/261  |  提交时间：2019/09/17
AlGaInAs quantum well  metal organic chemical vapor deposition  cathodeluminescence  thermal treatment  segregation  lasers  inp  semiconductors  dislocations  ingaalas  epitaxy  origin  band  Materials Science  
910 nm vertical-cavity surface-emitting laser arrays with 100W output power level and low driving current 期刊论文
Japanese Journal of Applied Physics, 2018, 卷号: 57, 期号: 10, 页码: 5
作者:  Zhang, J. W.;  Ning, Y. Q.;  Zhang, X.;  Hofmann, W.;  Liu, K. F.;  Zhang, J.;  Qiu, J.;  Zeng, Y. G.;  Fu, X. H.;  Huang, Y. W.;  Xiang, L.;  Liu, Y. Y.;  Zhang, J. Y.;  Qin, L.;  Wang, L. J.
浏览  |  Adobe PDF(1501Kb)  |  收藏  |  浏览/下载：734/209  |  提交时间：2019/09/17
quantum-well lasers  Physics  
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian;  Sun, Xiaojuan;  Li, Dabing;  Gao, Hongwei;  Zhou, Yu;  Zhang, Shuming;  Li, Deyao;  Zhang, Liqun;  Liu, Jianping;  Wang, Huaibing;  Ikeda, Masao;  Zheng, Xinhe;  Yang, Hui
浏览  |  Adobe PDF(3885Kb)  |  收藏  |  浏览/下载：569/129  |  提交时间：2019/09/17
Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion