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High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：156/52  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers 期刊论文
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7
作者:  D.Quandt;  D.Arsenijevic;  A.Strittmatte;  D.H.Bimberg
浏览  |  Adobe PDF(1508Kb)  |  收藏  |  浏览/下载：153/61  |  提交时间：2020/08/24
Submonolayer (SML),quantum dot (QD),laser diode,high-speed modulation,quantum-well lasers,dot lasers,gain,threshold,Engineering,Physics,Optics