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Sign reversal of planar Hall effect with temperature in La-doped Sr2IrO4 films 期刊论文
Applied Physics Letters, 2023, 卷号: 122, 期号: 2, 页码: 6
作者:  M. R. Liu;  J. N. Yue;  J. C. Meng;  T. N. Shao;  C. L. Yao;  X. J. Sun;  J. C. Nie and D. B. Li
Adobe PDF(2697Kb)  |  收藏  |  浏览/下载:20/6  |  提交时间:2024/07/03
Understanding efficiency improvements of betavoltaic batteries based on 4H-SiC, GaN, and diamond 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 10, 页码: 8
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  Z. Y. Chen;  X. Zhang;  X. Y. Li;  L. Liang;  L. Qin;  Y. G. Zeng;  Y. Y. Chen and Y. M. Liu
Adobe PDF(3647Kb)  |  收藏  |  浏览/下载:242/86  |  提交时间:2023/06/14
MOCVD growth of MgGa2O4 thin films for high-performance solar-blind UV photodetectors 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 1, 页码: 6
作者:  Q. C. Hou;  K. W. Liu;  D. Y. Han;  Y. X. Zhu;  X. Chen;  B. H. Li;  L. Liu and D. Z. Shen
Adobe PDF(5122Kb)  |  收藏  |  浏览/下载:171/54  |  提交时间:2023/06/14
Generation of integer and fractional perfect vortex beams using all-dielectric geometrical phase metasurfaces 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 20, 页码: 7
作者:  K. X. Cheng;  Z. X. Liu;  Z. D. Hu;  G. Y. Cao;  J. J. Wu and J. C. Wang
Adobe PDF(8904Kb)  |  收藏  |  浏览/下载:98/48  |  提交时间:2023/06/14
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载:207/70  |  提交时间:2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
浏览  |  Adobe PDF(1827Kb)  |  收藏  |  浏览/下载:255/81  |  提交时间:2021/07/06
High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 15, 页码: 5
作者:  Y. S. Hu,F. Bencheikh,S. Chenais,S. Forget,X. Y. Liu and C. Adachi
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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Defects controlled doping and electrical transport in TiS2 single crystals 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 12, 页码: 5
作者:  K. Chen,M. Song,Y. Y. Sun,H. Xu,D. C. Qi,Z. H. Su,X. Y. Gao,Q. Xu,J. Hu,J. F. Zhu,R. R. Zhang,J. Wang,L. Zhang,L. Cao,Y. Y. Han and Y. M. Xiong
浏览  |  Adobe PDF(1812Kb)  |  收藏  |  浏览/下载:188/61  |  提交时间:2021/07/06