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Impact of sequential annealing step on the performance of Cu2ZnSn(S,Se)(4) thin film solar cells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 95
作者:  Li, C. R.;  B. Yao;  Y. F. Li;  Z. H. Ding;  H. F. Zhao;  L. G. Zhang and Z. Z. Zhang
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Highly efficient organic tandem solar cell with a SubPc interlayer based on TAPC:C-70 bulk heterojunction 期刊论文
Scientific Reports, 2016, 卷号: 6
作者:  Gao, Y.;  F. M. Jin;  W. L. Li;  Z. S. Su;  B. Chu;  J. B. Wang;  H. F. Zhao;  H. R. Wu;  C. Y. Liu;  F. H. Hou;  T. Lin and Q. G. Song
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Effect of doping behaviors of Ag and S on the formation of p-type Ag-S co-doped ZnO film by a modified hydrothermal method 期刊论文
Thin Solid Films, 2016, 卷号: 600
作者:  Long, S. W.;  Y. F. Li;  B. Yao;  Z. H. Ding;  Y. Xu;  G. Yang;  R. Deng;  Z. Y. Xiao;  D. X. Zhao;  Z. Z. Zhang;  L. G. Zhang and H. F. Zhao
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Fully Integrated Organic Nanocrystal Diode as High Performance Room Temperature NO2 Sensor 期刊论文
Advanced Materials, 2016, 卷号: 28, 期号: 15
作者:  Jalil, A. R.;  H. Chang;  V. K. Bandari;  P. Robaschik;  J. Zhang;  P. F. Siles;  G. D. Li;  D. Burger;  D. Grimm;  X. Y. Liu;  G. Salvan;  D. R. T. Zahn;  F. Zhu;  H. B. Wang;  D. H. Yan and O. G. Schmidt
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Highly spectrum-selective near-band-edge ultraviolet photodiode based on indium oxide with dipole-forbidden bandgap transition 期刊论文
Ceramics International, 2016, 卷号: 42, 期号: 7
作者:  Huang, Y. N.;  Y. F. Li;  R. Deng;  B. Yao;  Z. H. Ding;  L. G. Zhang;  H. F. Zhao;  Z. Z. Zhang;  L. Liu and Y. R. Sui
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The formation and characteristics of ZnO/AlN and ZnO/AlN/ZnO core-shell nanowires 期刊论文
Integrated Ferroelectrics, 2016, 卷号: 172, 期号: 1
作者:  Li, R. X.;  L. Xu;  D. Fang;  X. Fang;  L. G. Zhang;  H. F. Zhao;  J. L. Tang;  X. H. Ma;  X. H. Wang and Z. P. Wei
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Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)(4)-Based Solar Cells 期刊论文
Acs Applied Materials & Interfaces, 2016, 卷号: 8, 期号: 27
作者:  Xiao, Z. Y.;  B. Yao;  Y. F. Li;  Z. H. Ding;  Z. M. Gao;  H. F. Zhao;  L. G. Zhang;  Z. Z. Zhang;  Y. R. Sui and G. Wang
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Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD 期刊论文
Rsc Advances, 2016, 卷号: 6, 期号: 65
作者:  Liu, J. X.;  H. W. Liang;  B. H. Li;  Y. Liu;  X. C. Xia;  H. L. Huang;  Q. A. Sandhu;  R. S. Shen;  Y. M. Luo and G. T. Du
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