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Speed enhancement of ultraviolet photodetector base on ZnO quantum dots by oxygen adsorption on surface defects 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  H. Ma;  K. Liu;  Z. Cheng;  Z. Zheng;  Y. Liu;  P. Zhang;  X. Chen;  D. Liu;  L. Liu and D. Shen
浏览  |  Adobe PDF(3186Kb)  |  收藏  |  浏览/下载：107/46  |  提交时间：2022/06/13
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
浏览  |  Adobe PDF(8619Kb)  |  收藏  |  浏览/下载：113/37  |  提交时间：2022/06/13
AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
浏览  |  Adobe PDF(2944Kb)  |  收藏  |  浏览/下载：101/32  |  提交时间：2021/07/06
Synthesis of Multilayer InSe0.82Te0.18 alloy for high performance near-infrared photodetector 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 815, 页码: 6
作者:  M. M. Yu,H. Li,F. Gao,Y. X. Hu,L. F. Wang,P. G. Hu and W. Feng
浏览  |  Adobe PDF(1486Kb)  |  收藏  |  浏览/下载：133/42  |  提交时间：2021/07/06
Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
Adobe PDF(1727Kb)  |  收藏  |  浏览/下载：127/51  |  提交时间：2021/07/06
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：159/60  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(1681Kb)  |  收藏  |  浏览/下载：456/132  |  提交时间：2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering