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Theoretical prediction of output performance of 63NiO-Si heterojunction betavoltaic cell 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 8
作者:  Y. Wang;  R. Zheng;  J. Lu;  X. Li;  Z. Chen;  X. Zhang;  Y. Zhang;  L. Liang;  Y. Zeng;  L. Qin and Y. Liu
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Pressure-induced phase transitions in weak interlayer coupling CdPS3 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 23, 页码: 7
作者:  M. M. Niu;  H. W. Cheng;  X. L. Li;  J. Yu;  X. W. Yang;  Y. Q. Gao;  R. G. Liu;  Y. Cao;  K. Y. He;  X. J. Xie;  Q. Shen;  M. Lu;  L. Wang;  T. T. Yin and J. X. Yan
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High-performance broadband photodetector based on PdSe2/black phosphorus heterodiode 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 23, 页码: 6
作者:  Q. S. Dong;  F. Wang;  X. Hu;  Y. Lu;  D. X. Zhao;  M. Zhang;  T. Han;  X. Y. Hou;  S. L. Wang;  M. S. Long and L. Shan
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Generation of integer and fractional perfect vortex beams using all-dielectric geometrical phase metasurfaces 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 20, 页码: 7
作者:  K. X. Cheng;  Z. X. Liu;  Z. D. Hu;  G. Y. Cao;  J. J. Wu and J. C. Wang
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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
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Super-broadband geometric phase devices based on circular polarization converter with mirror symmetry 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 10
作者:  W. Chen;  Y. Yu;  Q. Mu;  J. Campos;  Q. Wang;  S. Li;  S. Zhang and L. Xuan
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Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 25
作者:  D. Han;  K. Liu;  X. Chen;  B. Li;  T. Zhai;  L. Liu and D. Shen
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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
Adobe PDF(2009Kb)  |  收藏  |  浏览/下载:130/44  |  提交时间:2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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