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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
浏览  |  Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：126/57  |  提交时间：2022/06/13
AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
Adobe PDF(2944Kb)  |  收藏  |  浏览/下载：101/32  |  提交时间：2021/07/06
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：143/60  |  提交时间：2021/07/06
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：150/44  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(1681Kb)  |  收藏  |  浏览/下载：465/134  |  提交时间：2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Band alignments at interface of Cu2ZnSnS4/ZnO heterojunction: An X-ray photoelectron spectroscopy and first-principles study 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: 628, 页码: 293-297
作者:  Yang, G.;  Y. F. Li;  B. Yao;  Z. H. Ding;  R. Deng;  J. M. Qin;  F. Fang;  X. Fang;  Z. P. Wei and L. Liu
浏览  |  Adobe PDF(1195Kb)  |  收藏  |  浏览/下载：391/89  |  提交时间：2016/07/15
Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method 期刊论文
Journal of Alloys and Compounds, 2011, 卷号: 509, 期号: 24, 页码: 6751-6755
作者:  Liu X.;  Song H.;  Miao G. Q.;  Jiang H.;  Cao L. Z.;  Li D. B.;  Sun X. J.;  Chen Y. R.;  Li Z. M.
Adobe PDF(849Kb)  |  收藏  |  浏览/下载：546/132  |  提交时间：2012/10/21
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 466, 期号: 1—2, 页码: 507-511
作者:  Yu S. Z.;  Miao G. Q.;  Xie J. C.;  Jin Y. X.;  Zhang T. M.;  Song H.;  Jiang H.;  Li Z. M.
Adobe PDF(593Kb)  |  收藏  |  浏览/下载：663/143  |  提交时间：2012/10/21