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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode 期刊论文
Photonics Research, 2021, 卷号: 9, 期号: 10, 页码: 1907-1915
作者:  L. Guo;  K. E. Jiang;  X. Sun;  Z. Zhang;  J. Ben;  Y. Jia;  Y. Wang and D. Li
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Polarization assisted self-powered GaN-based UV photodetector with high responsivity 期刊论文
Photonics Research, 2021, 卷号: 9, 期号: 5, 页码: 734-740
作者:  J. Wang;  C. Chu;  K. Tian;  J. Che;  H. Shao;  Y. Zhang;  K. Jiang;  Z.-H. Zhang;  X. Sun and D. Li
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Numerical investigations into polarization-induced self-powered GaN-based MSM photodetectors 期刊论文
Applied Optics, 2021, 卷号: 60, 期号: 35, 页码: 10975-10983
作者:  J. Wang;  C. Chu;  J. Che;  H. Shao;  Y. Zhang;  X. Sun;  Z.-H. Zhang and D. Li
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Quenching of persistent photocurrent in an oxide UV photodetector 期刊论文
Journal of Materials Chemistry C, 2021, 卷号: 9, 期号: 11, 页码: 4039-4045
作者:  B. Qiao;  Z. Zhang;  X. Xie;  B. Li;  X. Chen;  H. Zhao;  K. Liu;  L. Liu and D. Shen
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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides 期刊论文
Light: Science and Applications, 2021, 卷号: 10, 期号: 1
作者:  K. Jiang;  X. Sun;  Z. Shi;  H. Zang;  J. Ben;  H.-X. Deng and D. Li
Adobe PDF(3763Kb)  |  收藏  |  浏览/下载:154/66  |  提交时间:2022/06/13
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
Adobe PDF(3040Kb)  |  收藏  |  浏览/下载:83/50  |  提交时间:2023/06/14