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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
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AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
作者:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
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Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
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Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy 期刊论文
Journal of Alloys and Compounds, 2010, 卷号: 504, 期号: 2, 页码: 484-487
作者:  Liu W. W.;  Yao B.;  Li Y. F.;  Li B. H.;  Zhang Z. Z.;  Shan C. X.;  Zhang J. Y.;  Shen D. Z.;  Fan X. W.
Adobe PDF(324Kb)  |  收藏  |  浏览/下载:810/86  |  提交时间:2012/10/21