p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy

	p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Liu W. W.; Yao B.; Li Y. F.; Li B. H.; Zhang Z. Z.; Shan C. X.; Zhang J. Y.; Shen D. Z.; Fan X. W.
	2010
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	504 期号:2 页码:484-487
摘要	Uniform N-doped MgZnO (MgZnO:N) films and the films with layer structure of MgZnO:N/Zn(3)N(2)/MgZnO:N (delta-doped MgZnO:N) were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy in the temperature range of 350-650 degrees C, respectively. The delta-doped MgZnO:N shows n-type conductivity in the growth temperatures ranging from 650 to 450 degrees C, but p-type conductivity with hole concentration of 3.41 x 10(17) cm(-3), mobility of 0.49 cm(2)/Vs and resistivity of 48.50 Omega cm at the growth temperature of 350 degrees C. However, all of the MgZnO:N films show n-type conductivity. The p-type delta-doped MgZnO:N is proven to be stable and reproducible, indicating that delta-doping technique combined with low growth temperature is an efficient way to fabricate p-type MgZnO:N films. The effects of the Zn(3)N(2) delta layer on the formation and properties of the p-type delta-doped MgZnO:N is discussed. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24754
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu W. W.,Yao B.,Li Y. F.,et al. p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy[J]. Journal of Alloys and Compounds,2010,504(2):484-487.
APA	Liu W. W..,Yao B..,Li Y. F..,Li B. H..,Zhang Z. Z..,...&Fan X. W..(2010).p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy.Journal of Alloys and Compounds,504(2),484-487.
MLA	Liu W. W.,et al."p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy".Journal of Alloys and Compounds 504.2(2010):484-487.

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