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中国科学院长春光学精密机械与物理研究所
Changchun Institute of Optics,Fine Mechanics and Physics,CAS
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AlGaN基宽禁带半导体光电材料与器件
期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 11, 页码: 2046-2067
Authors:
贲建伟
;
孙晓娟
;
蒋科
;
陈洋
;
石芝铭
;
臧行
;
张山丽
;
黎大兵
;
吕威
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Submit date:2021/07/06
AlGaN基材料
外延生长
掺杂
紫外发光器件
紫外探测
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy
期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors:
Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors
期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
Authors:
Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN
期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
Authors:
K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Polarization-enhanced AlGaN solar-blind ultraviolet detectors
期刊论文
Photonics Research, 2020, 卷号: 8, 期号: 7, 页码: 1243-1252
Authors:
K. Jiang,X. J. Sun,Z. H. Zhang,J. W. Ben,J. M. Che,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,W. Lv and D. B. Li
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Targeting epidermal growth factor-overexpressing triple-negative breast cancer by natural killer cells expressing a specific chimeric antigen receptor
期刊论文
Cell Proliferation, 2020, 卷号: 53, 期号: 8, 页码: 12
Authors:
Y. Liu,Y. H. Zhou,K. H. Huang,X. J. Fang,Y. Li,F. F. Wang,L. An,Q. F. Chen,Y. C. Zhang,A. H. Shi,S. Yu and J. Z. Zhang
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PbSe Quantum Dot Solar Cells Based on Directly Synthesized Semiconductive Inks
期刊论文
Acs Energy Letters, 2020, 卷号: 5, 期号: 12, 页码: 3797-3803
Authors:
Y. Liu,F. Li,G. Z. Shi,Z. K. Liu,X. F. Lin,Y. Shi,Y. F. Chen,X. Meng,Y. Lv,W. Deng,X. Q. Pan and W. L. Ma
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Highly Stable, Pretilted Homeotropic Alignment of Liquid Crystals Enabled by In Situ Self-Assembled, Dual-Wavelength Photoalignment
期刊论文
Acs Applied Electronic Materials, 2020, 卷号: 2, 期号: 7, 页码: 2017-2025
Authors:
V. Kumar,Z. Q. Ye,H. D. Jiang,Y. Shi,K. Li,D. Gerard,D. Luo,Q. Q. Mu and Y. J. Liu
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Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
期刊论文
Npj 2d Materials and Applications, 2020, 卷号: 4, 期号: 1, 页码: 7
Authors:
Y. P. Jia,Z. M. Shi,W. T. Hou,H. Zang,K. Jiang,Y. Chen,S. L. Zhang,Z. B. Qi,T. Wu,X. J. Sun and D. B. Li
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Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory
期刊论文
Journal of Applied Physics, 2020, 卷号: 128, 期号: 17, 页码: 10
Authors:
Y. J. Zhang,K. M. Zhang,S. M. Li,S. Li,Y. S. Qian,F. Shi,G. C. Jiao,Z. Miao,Y. L. Guo and Y. G. Zeng
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Submit date:2021/07/06