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Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
浏览  |  Adobe PDF(5687Kb)  |  收藏  |  浏览/下载：215/51  |  提交时间：2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：176/65  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：150/44  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
作者:  Y.Chen;  Y.P.Jia;  Z.M.Shi;  X.J.Sun;  D.B.Li
浏览  |  Adobe PDF(443Kb)  |  收藏  |  浏览/下载：114/41  |  提交时间：2020/08/24
gan,layer,aln,Engineering,Materials Science