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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：58/38  |  提交时间：2023/06/14
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：130/44  |  提交时间：2021/07/06
Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wevelength offset 期刊论文
Applied Physics Letters, 2017, 卷号: 111, 期号: 24
作者:  Li, H.;  P. Wolf;  X. W. Jia;  J. A. Lott and D. Bimberg
Adobe PDF(801Kb)  |  收藏  |  浏览/下载：224/65  |  提交时间：2018/06/13
Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb 期刊论文
Applied Physics Letters, 2009, 卷号: 95, 期号: 2
作者:  Qin J. M.;  Yao B.;  Yan Y.;  Zhang J. Y.;  Jia X. P.;  Zhang Z. Z.;  Li B. H.;  Shan C. X.;  Shen D. Z.
Adobe PDF(430Kb)  |  收藏  |  浏览/下载：523/98  |  提交时间：2012/10/21