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| Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文 Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5 作者: Chen Y. R.; Song H.; Jiang H.; Li Z. M.; Zhang Z. W.; Sun X. J.; Li D. B.; Miao G. Q. 浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载:365/101  |  提交时间:2015/04/24 |
| Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors 期刊论文 Applied Physics Letters, 2012, 卷号: 100, 期号: 12 作者: You K.; Jiang H.; Li D. B.; Sun X. J.; Song H.; Chen Y. R.; Li Z. M.; Miao G. Q.; Liu H. B. Adobe PDF(897Kb)  |  收藏  |  浏览/下载:688/106  |  提交时间:2012/10/21 |
| Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface 期刊论文 Applied Physics Letters, 2011, 卷号: 98, 期号: 12 作者: Sun X. J.; Li D. B.; Jiang H.; Li Z. M.; Song H.; Chen Y. R.; Miao G. Q. Adobe PDF(685Kb)  |  收藏  |  浏览/下载:454/109  |  提交时间:2012/10/21 |
| Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors 期刊论文 Applied Physics Letters, 2011, 卷号: 98, 期号: 1 作者: Li D. B.; Sun X. J.; Song H.; Li Z. M.; Chen Y. R.; Miao G. Q.; Jiang H. Adobe PDF(782Kb)  |  收藏  |  浏览/下载:506/137  |  提交时间:2012/10/21 |
| Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering 期刊论文 Applied Physics Letters, 2010, 期号: 96, 页码: 023111 作者: K. W. Liu; R. Chen; G. Z. Xing; T. Wu; H. D. Sun 浏览  |  Adobe PDF(473Kb)  |  收藏  |  浏览/下载:330/64  |  提交时间:2014/10/31 |
| Temperature-dependent electroluminescence from (Eu, Gd) coordination complexes 期刊论文 Applied Physics Letters, 1997, 卷号: 71, 期号: 18, 页码: 2596-2598 作者: Zhang X. M.; Sun R. G.; Zheng Q. B.; Kobayashi T.; Li W. L. Adobe PDF(325Kb)  |  收藏  |  浏览/下载:1133/207  |  提交时间:2012/10/21 |