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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2019, 卷号: 62, 期号: 6, 页码: 6
作者:  Kai, CuiHong;  Sun, XiaoJuan;  Jia, YuPing;  Shi, ZhiMing;  Jiang, Ke;  Ben, JianWei;  Wu, You;  Wang, Yong;  Liu, HeNan;  Li, XiaoHang;  Li, DaBing
收藏  |  浏览/下载：512/0  |  提交时间：2019/05/22
pit defects  surface potential  electron concentration  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：173/64  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics