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The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：432/133  |  提交时间：2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(4100Kb)  |  收藏  |  浏览/下载：438/140  |  提交时间：2019/09/17
threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics  
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
Acs Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, M. X.;  Li, Z. C.;  Wang, J.;  Zhou, R.;  Sun, Q.;  Sun, X. J.;  Li, D. B.;  Gao, H. W.;  Zhou, Y.;  Zhang, S. M.;  Li, D. Y.;  Zhang, L. Q.;  Liu, J. P.;  Wang, H. B.;  Ikeda, M.;  Zheng, X. H.;  Yang, H.
浏览  |  Adobe PDF(525Kb)  |  收藏  |  浏览/下载：397/126  |  提交时间：2019/09/17
AlGaN  near-ultraviolet  laser  Si substrate  stress  defect  light-emitting-diodes  gan  efficiency  Science & Technology - Other Topics  Materials Science  Optics  Physics  
Roomerature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si 期刊论文
Light: Science and Applications, 2018, 卷号: 7, 期号: 1
作者:  Sun, Yi;  Zhou, Kun;  Feng, Meixin;  Li, Zengcheng;  Zhou, Yu;  Sun, Qian;  Liu, Jianping;  Zhang, Liqun;  Li, Deyao;  Sun, Xiaojuan;  Li, Dabing;  Zhang, Shuming;  Ikeda, Masao;  Yang, Hui
浏览  |  Adobe PDF(1095Kb)  |  收藏  |  浏览/下载：445/130  |  提交时间：2019/09/17
Effect of V-Pits on the Property of GaN Epilayer Grown by Metalorganic Chemical Vapor Deposition 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7527-7531
作者:  Fu, Y. H.;  Sun, X. J.;  Ben, J. W.;  Jiang, K.;  Jia, Y. P.;  Liu, H. A.;  Li, Z. M.;  Li, D. B.
浏览  |  Adobe PDF(5358Kb)  |  收藏  |  浏览/下载：326/106  |  提交时间：2019/09/17
GaN  MOCVD  Defects  V-Pits  raman-scattering  quantum-wells  nitrides  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
AlGaN photonics_recent advances in materials and ultraviolet devices 期刊论文
Advances in Optics and Photonics, 2018, 卷号: 10, 期号: 1, 页码: 43-110
作者:  Li, D. B.;  Jiang, K.;  Sun, X. J.;  Guo, C. L.
浏览  |  Adobe PDF(6543Kb)  |  收藏  |  浏览/下载：670/230  |  提交时间：2019/09/17
light-emitting-diodes  high-quality aln  temperature  stimulated-emission  2nd-order optical-response  atomic-layer epitaxy  vapor-phase epitaxy  z-scan measurement  p-type conduction  room-temperature  avalanche photodiodes  Optics  
Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 32, 页码: 4623-4629
作者:  Ben, J. W.;  Sun, X. J.;  Jia, Y. P.;  Jiang, K.;  Shi, Z. M.;  Liu, H. N.;  Wang, Y.;  Kai, C. H.;  Wu, Y.;  Li, D. B.
浏览  |  Adobe PDF(4418Kb)  |  收藏  |  浏览/下载：422/146  |  提交时间：2019/09/17
light-emitting-diodes  high-quality aln  growth  temperature  sapphire  algan  efficiency  ratio  Chemistry  Crystallography  
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian;  Sun, Xiaojuan;  Li, Dabing;  Gao, Hongwei;  Zhou, Yu;  Zhang, Shuming;  Li, Deyao;  Zhang, Liqun;  Liu, Jianping;  Wang, Huaibing;  Ikeda, Masao;  Zheng, Xinhe;  Yang, Hui
浏览  |  Adobe PDF(3885Kb)  |  收藏  |  浏览/下载：395/102  |  提交时间：2019/09/17
Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion  
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.;  Sun, Q.;  Liu, J. P.;  Zhang, L. Q.;  Li, D. Y.;  Sun, X. J.;  Li, D. B.;  Zhang, S. M.;  Ikeda, M.;  Yang, H.
浏览  |  Adobe PDF(1095Kb)  |  收藏  |  浏览/下载：397/97  |  提交时间：2019/09/17
x-ray-diffraction  high-power  gan  dislocation  relaxation  films  Optics