Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing

doi:10.1039/c8ce00770e

CIOMP OpenIR

	Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing
	Ben, J. W.; Sun, X. J.; Jia, Y. P.; Jiang, K.; Shi, Z. M.; Liu, H. N.; Wang, Y.; Kai, C. H.; Wu, Y.; Li, D. B.
	2018
发表期刊	Crystengcomm
ISSN	1466-8033
卷号	20 期号:32 页码:4623-4629
摘要	AlN is the key material to obtain high performance ultraviolet optoelectronic and microelectronic devices. To obtain high quality AlN, a high temperature annealing method is employed. However, the mechanism of thermal annealing on improving the quality of AlN needs to be further studied. In this work, we focus on the influence of high temperature thermal annealing on the defect evolution in AlN and study the mechanism. AlN epilayers grown by metal-organic chemical vapor deposition (MOCVD) were annealed at different temperatures. The results showed that the full width at half maximum of the (0002) and (10-12) planes for the AlN templates decreased to 147 and 246.8 arcsec after thermal annealing at 1750 degrees C. Meanwhile many voids appeared in the physical vapor deposition AlN layer. To reveal the mechanism of thermal annealing on improving the quality of AlN, the AlN grown by physical vapor deposition (PVD) was also annealed by high temperature annealing. Atomic force microscopy results showed that realignment and coalescence occurred in the PVD-AlN, which gave the evidence for defect reduction in AlN by the thermal annealing method as well as the existence of AlN voids. The results presented here can not only provide a deeper understanding of the mechanism of the thermal annealing, but also offer a direction to obtain high quality AlN templates.
关键词	light-emitting-diodes high-quality aln growth temperature sapphire algan efficiency ratio Chemistry Crystallography
DOI	10.1039/c8ce00770e
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60941
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Ben, J. W.,Sun, X. J.,Jia, Y. P.,et al. Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing[J]. Crystengcomm,2018,20(32):4623-4629.
APA	Ben, J. W..,Sun, X. J..,Jia, Y. P..,Jiang, K..,Shi, Z. M..,...&Li, D. B..(2018).Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing.Crystengcomm,20(32),4623-4629.
MLA	Ben, J. W.,et al."Defect evolution in AlN templates on PVD-AlN-sapphire substrates by thermal annealing".Crystengcomm 20.32(2018):4623-4629.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Defect evolution in （4418KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载