Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si

doi:10.1038/s41377-018-0008-y

CIOMP OpenIR

	Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si
	Sun, Y.; Zhou, K.; Feng, M. X.; Li, Z. C.; Zhou, Y.; Sun, Q.; Liu, J. P.; Zhang, L. Q.; Li, D. Y.; Sun, X. J.; Li, D. B.; Zhang, S. M.; Ikeda, M.; Yang, H.
	2018
发表期刊	Light-Science & Applications
ISSN	2047-7538
卷号	7 页码:6
摘要	Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates, which are costly and smaller in size compared with other substrate materials.(1-3) Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications. To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure, a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1-xN buffer layers between GaN and Si substrate. Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers (QBs) and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer. A continuous-wave (CW) electrically pumped InGaN/GaN quantum well (QW) blue (450 nm) LD grown on Si was successfully demonstrated at room temperature (RT) with a threshold current density of 7.8 kA/cm(2)
关键词	x-ray-diffraction high-power gan dislocation relaxation films Optics
DOI	10.1038/s41377-018-0008-y
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60796
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Sun, Y.,Zhou, K.,Feng, M. X.,et al. Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si[J]. Light-Science & Applications,2018,7:6.
APA	Sun, Y..,Zhou, K..,Feng, M. X..,Li, Z. C..,Zhou, Y..,...&Yang, H..(2018).Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si.Light-Science & Applications,7,6.
MLA	Sun, Y.,et al."Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si".Light-Science & Applications 7(2018):6.

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