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Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 6, 页码: 810-817
作者:  J.-E. Sui;  J.-W. Ben;  H. Zang;  K. Jiang;  S.-L. Zhang;  B.-L. Guo;  Y. Chen;  Z.-M. Shi;  Y.-P. Jia;  D.-B. Li and X.-J. Sun
Adobe PDF(3595Kb)  |  收藏  |  浏览/下载:163/69  |  提交时间:2022/06/13
AlGaN基宽禁带半导体光电材料与器件 期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 11, 页码: 2046-2067
作者:  贲建伟;  孙晓娟;  蒋科;  陈洋;  石芝铭;  臧行;  张山丽;  黎大兵;  吕威
Adobe PDF(4280Kb)  |  收藏  |  浏览/下载:292/108  |  提交时间:2021/07/06
AlGaN基材料  外延生长  掺杂  紫外发光器件  紫外探测  
Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
Adobe PDF(2069Kb)  |  收藏  |  浏览/下载:160/31  |  提交时间:2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide