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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载:180/36  |  提交时间:2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Ultraviolet photodetectors based on wide bandgap oxide semiconductor films 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 11
作者:  C.Q.Zhou;  Q.Ai;  X.Chen;  X.H.Gao;  K.W.Liu;  D.Z.Shen
浏览  |  Adobe PDF(2797Kb)  |  收藏  |  浏览/下载:145/45  |  提交时间:2020/08/24
Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics  
Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 6
作者:  C.Yang;  H.W.Liang;  Z.Z.Zhang;  X.C.Xia;  H.Q.Zhang;  R.S.Shen
浏览  |  Adobe PDF(1090Kb)  |  收藏  |  浏览/下载:166/48  |  提交时间:2020/08/24
Ga2O3 single crystal,solar-blind,photodetector,high temperature,ultraviolet photodetectors,growth,performance,detectors,film,Physics  
Avalanche Gain in Metal-Semiconductor-Metal Ga2O3 Solar-Blind Photodiodes 期刊论文
Journal of Physical Chemistry C, 2019, 卷号: 123, 期号: 30, 页码: 18516-18520
作者:  B.S.Qiao;  Z.Z.Zhang;  X.H.Xie;  B.H.Li;  K.X.Li;  X.Chen
浏览  |  Adobe PDF(1279Kb)  |  收藏  |  浏览/下载:170/70  |  提交时间:2020/08/24
photodetector,transparent,Chemistry,Science & Technology - Other Topics,Materials Science  
Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience 期刊论文
Crystals, 2019, 卷号: 9, 期号: 4, 页码: 7
作者:  X.Y.Chen;  Z.Z.Zhang;  Y.Y.Zhang;  B.Yao;  B.H.Li;  Q.Gong
浏览  |  Adobe PDF(1213Kb)  |  收藏  |  浏览/下载:150/74  |  提交时间:2020/08/24
molecular beam epitaxy,ZnO,dopant,defects,x-ray photoelectron,optical-properties,thin-films  
Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO 期刊论文
Journal of Physics D-Applied Physics, 2019, 卷号: 52, 期号: 50, 页码: 6
作者:  H.Y.Chen;  X.Y.Sun;  D.S.Yao;  X.H.Xie;  F.C.C.Ling;  S.C.Su
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MgZnO,UV PD,self-powered,asymmetric electrodes,ultraviolet photodetector,high responsivity,Physics