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Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO
H.Y.Chen; X.Y.Sun; D.S.Yao; X.H.Xie; F.C.C.Ling; S.C.Su
2019
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号52期号:50页码:6
摘要A back-to-back asymmetric Schottky self-powered UV photodetector (PD) with fast speed was realized by a facile combination of ternary alloy MgZnO film and asymmetric Au electrodes. The high-crystalline-quality MgZnO films were synthesized by metal organic chemical vapor deposition. Due to the incorporation of Mg, the band gap of MgZnO film was confirmed to be 3.76 eV. In addition, owing to the large Schottky barrier difference between the active layer and the two asymmetric Au electrodes, the responsivity of the device could reach up to 2.22 mA W-1 at the optical wavelength of 330 nm without any power supply, and with a sharp cutoff at the wavelength of 343 nm. The device exhibits a very low dark current of 247 pA at -5 V. More interestingly, the decay time of our device is only around 92 mu s, which is much quicker than any other previously reported UV PDs even with bias voltage applied. Our findings provide a promising approach to realize a high-performance self-powered UV PD.
关键词MgZnO,UV PD,self-powered,asymmetric electrodes,ultraviolet photodetector,high responsivity,Physics
DOI10.1088/1361-6463/ab452e
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收录类别SCI ; EI
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63459
专题中国科学院长春光学精密机械与物理研究所
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H.Y.Chen,X.Y.Sun,D.S.Yao,et al. Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO[J]. Journal of Physics D-Applied Physics,2019,52(50):6.
APA H.Y.Chen,X.Y.Sun,D.S.Yao,X.H.Xie,F.C.C.Ling,&S.C.Su.(2019).Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO.Journal of Physics D-Applied Physics,52(50),6.
MLA H.Y.Chen,et al."Back-to-back asymmetric Schottky-type self-powered UV photodetector based on ternary alloy MgZnO".Journal of Physics D-Applied Physics 52.50(2019):6.
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