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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载：69/45  |  提交时间：2023/06/14
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：147/51  |  提交时间：2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
浏览  |  Adobe PDF(1827Kb)  |  收藏  |  浏览/下载：138/57  |  提交时间：2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载：122/42  |  提交时间：2021/07/06
Quantitative study of spin relaxation in rubrene thin films by inverse spin Hall effect 期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 5, 页码: 5
作者:  Z.H.Li;  T.Li;  D.C.Qi;  W.Tong;  L.Q.Xu;  J.Zhu;  Z.T.Zhang
Adobe PDF(1738Kb)  |  收藏  |  浏览/下载：190/86  |  提交时间：2020/08/24
magnetoresistance,diffusion,transport,injection,Physics  
Transparent perovskite light-emitting diodes by employing organic-inorganic multilayer transparent top electrodes 期刊论文
Applied Physics Letters, 2017, 卷号: 111, 期号: 21
作者:  Liang, J. Q.;  X. Y. Guo;  L. Song;  J. Lin;  Y. S. Hu;  N. Zhang and X. Y. Liu
Adobe PDF(983Kb)  |  收藏  |  浏览/下载：343/107  |  提交时间：2018/06/13
Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 23
作者:  Gu, Z. Q.;  H. H. Huang;  S. Zhang;  X. Y. Wang;  J. Gao;  L. Zhao;  W. T. Zheng and C. Q. Hu
Adobe PDF(1658Kb)  |  收藏  |  浏览/下载：374/114  |  提交时间：2017/09/11
Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 6
作者:  Zhang, N.;  Y. S. Hu;  J. Lin;  Y. T. Li and X. Y. Liu
浏览  |  Adobe PDF(2211Kb)  |  收藏  |  浏览/下载：294/56  |  提交时间：2017/09/11
Trap-assisted large gain in Cu2O/C-60 hybrid ultraviolet/visible photodetectors 期刊论文
Applied Physics Letters, 2016, 卷号: 108, 期号: 16
作者:  Liu, L.;  Z. S. Su;  Q. Y. Xi;  G. Gao;  W. Yang;  Y. X. Zhao;  C. Q. Wu;  L. D. Wang and J. W. Xu
浏览  |  Adobe PDF(1082Kb)  |  收藏  |  浏览/下载：282/80  |  提交时间：2017/09/11
Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文
Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5
作者:  Chen Y. R.;  Song H.;  Jiang H.;  Li Z. M.;  Zhang Z. W.;  Sun X. J.;  Li D. B.;  Miao G. Q.
浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载：370/102  |  提交时间：2015/04/24