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中国科学院长春光学精密机械与物理研究所
Changchun Institute of Optics,Fine Mechanics and Physics,CAS
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Point defects: key issues for -oxides wide-bandgap semiconductors development
期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:
X.-H.Xie
;
B.-H.Li
;
Z.-Z.Zhang
;
L.Liu
;
K.-W.Liu
;
C.-X.Shan
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Adobe PDF(2069Kb)
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浏览/下载:232/51
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提交时间:2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:
P.Klenovsky
;
A.Schliwa
;
D.Bimberg
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Adobe PDF(1784Kb)
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浏览/下载:276/80
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提交时间:2020/08/24
cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:
J.-M.Shang
;
J.Feng
;
C.-A.Yang
;
S.-W.Xie
;
Y.Zhang
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Adobe PDF(971Kb)
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浏览/下载:263/71
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提交时间:2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors
Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band
期刊论文
Light: Science and Applications, 2019, 卷号: 8, 期号: 1
作者:
H.-Y.Lu
;
S.-C.Tian
;
C.-Z.Tong
;
L.-J.Wang
;
J.-M.Rong
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Adobe PDF(1422Kb)
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浏览/下载:204/54
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提交时间:2020/08/24
Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers
Comparative analyses of optical limiting effects in metal nanoparticles and perovskite nanocrystals
期刊论文
Optical Materials, 2019, 卷号: 92, 页码: 366-372
作者:
K.S.Rao
;
R.A.Ganeev
;
K.Zhang
;
Y.Fu
;
G.S.Boltaev
;
S.K.Maurya
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Adobe PDF(2087Kb)
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浏览/下载:261/57
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提交时间:2020/08/24
Optical limiting,Nanoparticles,Perovskites,Quantum dots,Nonlinear,absorption,Nanocrystals,reverse saturable absorption,laser-ablation,ag nanoparticles,silver,gold,nonlinearities,semiconductors,fullerenes,dots,Materials Science,Optics
Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures
期刊论文
Physical Chemistry Chemical Physics, 2019, 卷号: 21, 期号: 34, 页码: 18612-18621
作者:
M.Idrees
;
H.U.Din
;
R.Ali
;
G.Rehman
;
T.Hussain
;
C.V.Nguyen
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Adobe PDF(6608Kb)
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浏览/下载:304/78
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提交时间:2020/08/24
transition-metal dichalcogenides,electronic-structures,optical-properties,semiconductors,generation,graphene,Chemistry,Physics
Formation of controllable 1D and 2D periodic surface structures on cobalt by femtosecond double pulse laser irradiation
期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 3, 页码: 5
作者:
S.A.Jalil
;
J.J.Yang
;
M.ElKabbash
;
C.Cong
;
C.L.Guo
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Adobe PDF(2301Kb)
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浏览/下载:206/75
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提交时间:2020/08/24
large-area,semiconductors,lithography,dynamics,ablation,Physics
Electron transport behavior of polymer-derived amorphous silicoboron carbonitrides
期刊论文
Journal of the American Ceramic Society, 2019, 卷号: 102, 期号: 10, 页码: 6038-6047
作者:
K.W.Wang
;
B.S.Ma
;
L.G.Zhang
;
Z.Z.Sun
;
Y.G.Wang
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Adobe PDF(920Kb)
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浏览/下载:247/53
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提交时间:2020/08/24
band gap,electrical properties,silicoboron carbonitride,structure,optical-absorption,si-(b)-c-n system,phase-separation,atomic-structure,ceramics,films,conductivity,spectra,semiconductors,diffraction,Materials Science
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence
期刊论文
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:
Song, Y.
;
Zhang, L. G.
;
Zeng, Y. G.
;
Qin, L.
;
Zhou, Y. L.
;
Ning, Y. Q.
;
Wang, L. J.
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Adobe PDF(2963Kb)
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浏览/下载:543/238
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提交时间:2019/09/17
AlGaInAs quantum well
metal organic chemical vapor deposition
cathodeluminescence
thermal treatment
segregation
lasers
inp
semiconductors
dislocations
ingaalas
epitaxy
origin
band
Materials Science
Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector
期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 50, 页码: 43299-43304
作者:
Yu, M. M.
;
Li, H.
;
Liu, H.
;
Qin, F. L.
;
Gao, F.
;
Hu, Y. X.
;
Dai, M. J.
;
Wang, L. F.
;
Feng, W.
;
Hu, P. A.
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Adobe PDF(3276Kb)
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浏览/下载:414/108
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提交时间:2019/09/17
Ga0.84In1.86Se
alloy engineering
photodetectors
two-dimensional
materials
III-VI group semiconductors
temperature
gase
inse
deposition
graphene
mobility
growth
films
Science & Technology - Other Topics
Materials Science