Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots

doi:10.1103/PhysRevB.100.115424

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	Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots
	P.Klenovsky; A.Schliwa; D.Bimberg
	2019
发表期刊	Physical Review B
ISSN	2469-9950
卷号	100 期号:11 页码:14
摘要	Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In, Ga) As/GaAs dots. We proceed from the inspection of the confinement potentials for k not equal 0 and k = 0 conduction and k = 0 valence bands, through the formulation of k . p calculations for k-indirect transitions, up to the excitonic structure of Gamma transitions. Throughout this process we compare the results obtained for dots on both GaP and GaAs substrates, enabling us to make a direct comparison to the (In, Ga) As/GaAs quantum dot system. We also discuss the realization of quantum gates.
关键词	cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures
DOI	10.1103/PhysRevB.100.115424
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收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63292
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	P.Klenovsky,A.Schliwa,D.Bimberg. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots[J]. Physical Review B,2019,100(11):14.
APA	P.Klenovsky,A.Schliwa,&D.Bimberg.(2019).Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots.Physical Review B,100(11),14.
MLA	P.Klenovsky,et al."Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots".Physical Review B 100.11(2019):14.

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