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Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector
Yu, M. M.; Li, H.; Liu, H.; Qin, F. L.; Gao, F.; Hu, Y. X.; Dai, M. J.; Wang, L. F.; Feng, W.; Hu, P. A.
2018
发表期刊Acs Applied Materials & Interfaces
ISSN1944-8244
卷号10期号:50页码:43299-43304
摘要The electronic and optoelectronic properties of 2D alloy Ga0.84In0.16Se were investigated for the first time. 2D Ga0.84In0.16Se FETs show p-type conduction behaviors. 2D Ga0.84In0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga0.84In0.16Se has great potential for application in photodetection and sensor devices.
关键词Ga0.84In1.86Se alloy engineering photodetectors two-dimensional materials III-VI group semiconductors temperature gase inse deposition graphene mobility growth films Science & Technology - Other Topics Materials Science
DOI10.1021/acsami.8b15317
收录类别SCI ; EI
引用统计
被引频次:19[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/61173
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
Yu, M. M.,Li, H.,Liu, H.,et al. Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector[J]. Acs Applied Materials & Interfaces,2018,10(50):43299-43304.
APA Yu, M. M..,Li, H..,Liu, H..,Qin, F. L..,Gao, F..,...&Hu, P. A..(2018).Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector.Acs Applied Materials & Interfaces,10(50),43299-43304.
MLA Yu, M. M.,et al."Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector".Acs Applied Materials & Interfaces 10.50(2018):43299-43304.
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