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| Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文 Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5 作者: Chen Y. R.; Song H.; Jiang H.; Li Z. M.; Zhang Z. W.; Sun X. J.; Li D. B.; Miao G. Q. 浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载:488/113  |  提交时间:2015/04/24 |
| Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors 期刊论文 Applied Physics Letters, 2012, 卷号: 100, 期号: 12 作者: You K.; Jiang H.; Li D. B.; Sun X. J.; Song H.; Chen Y. R.; Li Z. M.; Miao G. Q.; Liu H. B. Adobe PDF(897Kb)  |  收藏  |  浏览/下载:818/114  |  提交时间:2012/10/21 |
| Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface 期刊论文 Applied Physics Letters, 2011, 卷号: 98, 期号: 12 作者: Sun X. J.; Li D. B.; Jiang H.; Li Z. M.; Song H.; Chen Y. R.; Miao G. Q. Adobe PDF(685Kb)  |  收藏  |  浏览/下载:574/120  |  提交时间:2012/10/21 |
| Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors 期刊论文 Applied Physics Letters, 2011, 卷号: 98, 期号: 1 作者: Li D. B.; Sun X. J.; Song H.; Li Z. M.; Chen Y. R.; Miao G. Q.; Jiang H. Adobe PDF(782Kb)  |  收藏  |  浏览/下载:635/155  |  提交时间:2012/10/21 |
| Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering 期刊论文 Applied Physics Letters, 2010, 期号: 96, 页码: 023111 作者: K. W. Liu; R. Chen; G. Z. Xing; T. Wu; H. D. Sun 浏览  |  Adobe PDF(473Kb)  |  收藏  |  浏览/下载:349/69  |  提交时间:2014/10/31 |
| Fluorescence intensity and color purity improvement in nanosized YBO3 : Eu 期刊论文 Applied Physics Letters, 2002, 卷号: 80, 期号: 8, 页码: 1447-1449 作者: Wei Z. G.; Sun L. D.; Liao C. S.; Yan C. H. Adobe PDF(334Kb)  |  收藏  |  浏览/下载:520/99  |  提交时间:2012/10/21 |