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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
浏览  |  Adobe PDF(3040Kb)  |  收藏  |  浏览/下载:74/47  |  提交时间:2023/06/14
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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The origin of the strong microwave absorption in black TiO2 期刊论文
Applied Physics Letters, 2016, 卷号: 108, 期号: 18
作者:  Li, K. X.;  J. L. Xu;  X. D. Yan;  L. Liu;  X. B. Chen;  Y. S. Luo;  J. He and D. Z. Shen
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Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 23
作者:  Gu, Z. Q.;  H. H. Huang;  S. Zhang;  X. Y. Wang;  J. Gao;  L. Zhao;  W. T. Zheng and C. Q. Hu
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Trap-assisted large gain in Cu2O/C-60 hybrid ultraviolet/visible photodetectors 期刊论文
Applied Physics Letters, 2016, 卷号: 108, 期号: 16
作者:  Liu, L.;  Z. S. Su;  Q. Y. Xi;  G. Gao;  W. Yang;  Y. X. Zhao;  C. Q. Wu;  L. D. Wang and J. W. Xu
浏览  |  Adobe PDF(1082Kb)  |  收藏  |  浏览/下载:291/84  |  提交时间:2017/09/11