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The origin of the strong microwave absorption in black TiO2
Li, K. X.; J. L. Xu; X. D. Yan; L. Liu; X. B. Chen; Y. S. Luo; J. He and D. Z. Shen
2016
发表期刊Applied Physics Letters
卷号108期号:18
摘要By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that gamma-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.
文章类型期刊
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/57026
专题中科院长春光机所知识产出
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GB/T 7714
Li, K. X.,J. L. Xu,X. D. Yan,et al. The origin of the strong microwave absorption in black TiO2[J]. Applied Physics Letters,2016,108(18).
APA Li, K. X..,J. L. Xu.,X. D. Yan.,L. Liu.,X. B. Chen.,...&J. He and D. Z. Shen.(2016).The origin of the strong microwave absorption in black TiO2.Applied Physics Letters,108(18).
MLA Li, K. X.,et al."The origin of the strong microwave absorption in black TiO2".Applied Physics Letters 108.18(2016).
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