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Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy 期刊论文
Journal of Applied Physics, 2019, 卷号: 125, 期号: 10, 页码: 7
作者:  J.P.Li;  G.Q.Miao;  Z.W.Zhang;  X.Li;  H.Song;  H.Jiang;  Y.R.Chen
浏览  |  Adobe PDF(2185Kb)  |  收藏  |  浏览/下载：295/73  |  提交时间：2020/08/24
quantum-wells,discontinuity,offsets,heterostructures,edge,Physics  
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:  P.Klenovsky;  A.Schliwa;  D.Bimberg
浏览  |  Adobe PDF(1784Kb)  |  收藏  |  浏览/下载：385/91  |  提交时间：2020/08/24
cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures  
Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions 期刊论文
Advanced Materials Interfaces, 2018, 卷号: 5, 期号: 20, 页码: 7
作者:  Xin, W.;  Jiang, H. B.;  Li, X. K.;  Zhou, X. F.;  Lu, J. L.;  Yang, J. J.;  Guo, C.;  Liu, Z. B.;  Tian, J. G.
浏览  |  Adobe PDF(1752Kb)  |  收藏  |  浏览/下载：433/135  |  提交时间：2019/09/17
anisotropy  black phosphorus  interlayer carrier transportation  scanning photocurrent imaging measurement  van der Waals junction  heterostructures  growth  mos2  Chemistry  Materials Science  
Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
作者:  Liu, T.;  Xiang, D.;  Zheng, Y.;  Wang, Y. A.;  Wang, X. Y.;  Wang, L.;  He, J.;  Liu, L.;  Chen, W.
浏览  |  Adobe PDF(1999Kb)  |  收藏  |  浏览/下载：545/150  |  提交时间：2019/09/17
homogeneous p-n junctions and inverters  MoTe2/BN heterostructures  nonvolatile and programmable  photodoping in MoTe2 devices  photoresist-free  transition-metal dichalcogenides  black phosphorus  mos2  wse2  inverters  graphene  diodes  Chemistry  Science & Technology - Other Topics  Materials Science  Physics