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中国科学院长春光学精密机械与物理研究所
Changchun Institute of Optics,Fine Mechanics and Physics,CAS
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AlGaN基宽禁带半导体光电材料与器件
期刊论文
人工晶体学报, 2020, 卷号: 49, 期号: 11, 页码: 2046-2067
Authors:
贲建伟
;
孙晓娟
;
蒋科
;
陈洋
;
石芝铭
;
臧行
;
张山丽
;
黎大兵
;
吕威
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Submit date:2021/07/06
AlGaN基材料
外延生长
掺杂
紫外发光器件
紫外探测
基于近红外超连续激光光谱的水稻种子活力无损分级检测研究
期刊论文
中国光学, 2020, 卷号: 13, 期号: 05, 页码: 1032-1043
Authors:
金文玲
;
曹乃亮
;
朱明东
;
陈伟
;
张佩光
;
赵庆磊
;
梁静秋
;
余应弘
;
吕金光
;
阚瑞峰
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近红外光谱
种子活力
偏最小二乘判别分析
主成分分析
液晶偏振变焦透镜组合设计
期刊论文
液晶与显示, 2020, 卷号: 35, 期号: 07, 页码: 741-748
Authors:
魏如东
;
穆全全
;
王启东
;
陈万
;
赵志伟
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液晶
偏振透镜
变焦
基于实时递推最小二乘的多目标编批研究
期刊论文
国外电子测量技术, 2020, 卷号: 39, 期号: 02, 页码: 59-64
Authors:
姜鑫
;
陈武雄
;
朱明
;
郝志成
;
高文
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Submit date:2021/07/06
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数据关联
最小二乘
显著性检测
Theoretical and experimental study of nanosecond pulse amplification in a CW CO2 amplifier
期刊论文
Infrared Physics & Technology, 2020, 卷号: 111, 页码: 8
Authors:
R. R. Zhang,Q. K. Pan,J. Guo,F. Chen,D. Y. Yu,J. J. Sun,K. Zhang and L. W. Zhang
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Modulation for efficiency and spectra of non-doped white organic light emitting diodes by combining an exciplex with an ultrathin phosphorescent emitter
期刊论文
Rsc Advances, 2020, 卷号: 10, 期号: 55, 页码: 33461-33468
Authors:
Z. M. Liu,B. Zhao,Y. Gao,H. F. Chen,B. Z. Dong,Y. B. Xu,H. Wang,B. S. Xu and W. L. Li
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A mechanically bendable and conformally attachable polymer membrane microlaser array enabled by digital interference lithography
期刊论文
Nanoscale, 2020, 卷号: 12, 期号: 12, 页码: 6736-6743
Authors:
W. B. Huang,X. J. Zhang,T. C. Yang,S. L. Wu,X. F. Yang,Y. H. Liu and L. S. Chen
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Investigation on the role of amines in the liquefaction and recrystallization process of MAPbI(3)perovskite
期刊论文
Journal of Materials Chemistry A, 2020, 卷号: 8, 期号: 27, 页码: 13585-13593
Authors:
X. Y. Feng,K. W. Ng,S. P. Wang,W. Z. Chen,Z. Z. Zhang,W. Chen,Y. Y. Zhao,B. Tu,Z. K. Tang,H. Pan and Z. B. He
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Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application
期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 830, 页码: 7
Authors:
X. K. Liu,X. H. Deng,X. H. Li,H. C. Chiu,Y. X. Chen,V. D. Botcha,M. Wang,W. J. Yu and C. H. Lin
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy
期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors:
Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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