Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy

doi:10.1063/1.5079774

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	Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy
	J.P.Li; G.Q.Miao; Z.W.Zhang; X.Li; H.Song; H.Jiang; Y.R.Chen
	2019
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	125 期号:10 页码:7
摘要	X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy were used to measure the band structure for high lattice mismatched In0.82Ga0.18As/InP. The valence band offset was determined to be 0.43 eV, which is in agreement with the theoretical values based on the previous analysis. Together with a conduction band offset of 0.44 eV, it is indicated that a type-I band structure forms at the In0.82Ga0.18As/InP heterojunction. The precise determination of the band structure of In0.82Ga0.18As/InP is crucial for future device design and performance improvement. Besides, the valence band offset of In0.82Ga0.18As/GaAs was estimated to be 0.24 eV, which also presents a type-I band alignment.
关键词	quantum-wells,discontinuity,offsets,heterostructures,edge,Physics
DOI	10.1063/1.5079774
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63264
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J.P.Li,G.Q.Miao,Z.W.Zhang,et al. Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy[J]. Journal of Applied Physics,2019,125(10):7.
APA	J.P.Li.,G.Q.Miao.,Z.W.Zhang.,X.Li.,H.Song.,...&Y.R.Chen.(2019).Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy.Journal of Applied Physics,125(10),7.
MLA	J.P.Li,et al."Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy".Journal of Applied Physics 125.10(2019):7.

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