Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions

doi:10.1002/admi.201800964

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	Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions
	Xin, W.; Jiang, H. B.; Li, X. K.; Zhou, X. F.; Lu, J. L.; Yang, J. J.; Guo, C.; Liu, Z. B.; Tian, J. G.
	2018
发表期刊	Advanced Materials Interfaces
ISSN	2196-7350
卷号	5 期号:20 页码:7
摘要	A combination of different 2D layered materials by van der Waals (vdW) stacking or lateral splicing provides the basic building blocks for dynamic behavior researches of interlayer carriers. Anisotropic materials, recently, have further attracted attentions in this field because of their supply of freedoms for regulating the performance of electro-optical devices, whereas detailed characteristics and mechanisms of interlayer carrier transportation in these materials need remain to be revealed. Here, by using the photoassisted field effect and scanning photocurrent imaging measurements, it is demonstrated that the photoinduced interlayer carrier transportation in cross-stacked black phosphorus (BP) vdW junctions is strongly dependent on the crystal orientation and stacking morphology. Type-I and II band alignments are respectively predicted in the BP junctions with parallel and vertical crystal orientation stacking. The interlayer carrier transportation with both vertical and lateral modes is observed within only one sample. Combined first principle calculation with band theory analyses, the small band offset for holes and tunneling effect play key roles during the interlayer transportation. These results highlight the importance of crystal orientation of materials in vdW junctions and provide insights, both experimentally and theoretically, into engineering and design of orientation-based nanodevices.
关键词	anisotropy black phosphorus interlayer carrier transportation scanning photocurrent imaging measurement van der Waals junction heterostructures growth mos2 Chemistry Materials Science
DOI	10.1002/admi.201800964
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61108
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xin, W.,Jiang, H. B.,Li, X. K.,et al. Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions[J]. Advanced Materials Interfaces,2018,5(20):7.
APA	Xin, W..,Jiang, H. B..,Li, X. K..,Zhou, X. F..,Lu, J. L..,...&Tian, J. G..(2018).Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions.Advanced Materials Interfaces,5(20),7.
MLA	Xin, W.,et al."Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions".Advanced Materials Interfaces 5.20(2018):7.

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