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Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 3, 页码: 311-317
作者:  X.K.Liu;  Y.X.Chen;  D.B.Li;  S.W.Wang;  C.C.Ting;  L.Chen
浏览  |  Adobe PDF(1124Kb)  |  收藏  |  浏览/下载：255/81  |  提交时间：2020/08/24
mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：332/105  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：262/75  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Enhancing thermal properties of few-layer boron nitride by high-k Al2O3 capping layer 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 797, 页码: 262-268
作者:  Y.X.Chen;  K.L.Li;  Z.W.Li;  S.Q.Hu;  X.J.Sun;  Z.M.Shi;  X.K.Liu
浏览  |  Adobe PDF(2209Kb)  |  收藏  |  浏览/下载：383/88  |  提交时间：2020/08/24
Boron nitride,Thermal conductivity,Raman spectroscopy,graphene,conductivity,deposition,nanosheets