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Efficient and Stable Gd3Ga5O12:Cr3+ Phosphors for High-Performance NIR LEDs 期刊论文
Advanced Optical Materials, 2023, 卷号: 11, 期号: 21, 页码: 8
作者:  C. Jin;  R. Y. Li;  Y. F. Liu;  L. L. Zhang;  J. H. Zhang;  P. Sun;  Z. H. Luo and J. Jiang
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：36/0  |  提交时间：2024/07/03
High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution 期刊论文
Advanced Optical Materials, 2023, 页码: 8
作者:  Y. H. Li;  M. Q. Che;  N. Zhang;  Y. T. Zou;  X. Y. Zhao;  Y. C. Lin;  B. C. Lv;  X. B. Ma;  Y. R. Shi;  J. J. Yang;  X. J. Sun;  S. J. Li and D. B. Li
浏览  |  Adobe PDF(1829Kb)  |  收藏  |  浏览/下载：37/12  |  提交时间：2024/07/03
CBANet: An End-to-End Cross-Band 2-D Attention Network for Hyperspectral Change Detection in Remote Sensing 期刊论文
Ieee Transactions on Geoscience and Remote Sensing, 2023, 卷号: 61, 页码: 11
作者:  Y. H. Li;  J. C. Ren;  Y. J. Yan;  Q. Y. Liu;  P. Ma;  A. Petrovski and H. J. Sun
浏览  |  Adobe PDF(2224Kb)  |  收藏  |  浏览/下载：11/2  |  提交时间：2024/07/03
Electronic state evolution of oxygen-doped monolayer WSe2 assisted by femtosecond laser irradiation 期刊论文
Physical Chemistry Chemical Physics, 2023, 卷号: 25, 期号: 3, 页码: 2043-2049
作者:  L. Wang;  D. Wang;  Y. Luo;  C. Y. Xu;  L. Cui;  X. B. Li and H. B. Sun
浏览  |  Adobe PDF(1165Kb)  |  收藏  |  浏览/下载：202/60  |  提交时间：2023/06/14
High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes 期刊论文
Materials Today Physics, 2023, 卷号: 33, 页码: 6
作者:  C. Zhang, K. W. Liu, Q. Ai, X. Sun, X. Chen, J. L. Yang, Y. X. Zhu, Z. Cheng, B. H. Li, L. Liu and D. Z. Shen
浏览  |  Adobe PDF(3975Kb)  |  收藏  |  浏览/下载：20/5  |  提交时间：2024/08/12
Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing 期刊论文
Journal of Materials Chemistry C, 2023, 卷号: 11, 期号: 9, 页码: 3227-3234
作者:  X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen
浏览  |  Adobe PDF(2149Kb)  |  收藏  |  浏览/下载：23/4  |  提交时间：2024/07/25
GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity 期刊论文
Ieee Transactions on Electron Devices, 2023, 页码: 6
作者:  Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li
浏览  |  Adobe PDF(1106Kb)  |  收藏  |  浏览/下载：15/7  |  提交时间：2024/07/26