中国科学院长春光学精密机械与物理研究所

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	Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing
	X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen
	2023
发表期刊	Journal of Materials Chemistry C
ISSN	2050-7526
卷号	11期号:9页码:3227-3234
摘要	Pure and similar to 7.5 at% Zn alloyed beta-Ga2O3 epitaxial films were epitaxially grown by metal organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by 600 degrees C annealing in an oxygen atmosphere. We have characterized the structural, optical and electrical properties of the four prepared samples including as-grown pure beta-Ga2O3, annealed pure beta-Ga2O3, as-grown beta-Ga2O3:Zn and annealed beta-Ga2O3:Zn films in detail. Furthermore, solar-blind UV photodetectors with metal-semiconductor-metal structures fabricated from these epitaxial thin films have been demonstrated. A giant performance enhancement can be observed for beta-Ga2O3 photodetectors by Zn alloying and subsequent oxygen annealing. The device fabricated from the annealed beta-Ga2O3:Zn film shows a low dark current of similar to 3.7 x 10(-11) A, a high responsivity of 2.8 x 10(3) A W-1 and a high UV-vis rejection ratio of 5.6 x 10(5) at 10 V bias. And an ultra-high specific detectivity up to 5.9 x 10(16) cm Hz(1/2) W-1 (Jones) is observed. Such excellent photodetection performance of annealed Ga2O3:Zn devices can be explained by the donor compensation effect and the deep level trap removal effect by the introduction of Zn. Our findings contribute a roadmap for realizing high-performance Ga2O3-based solar-blind photodetectors, and provide a sturdy foundation for future applications.
DOI	10.1039/d2tc05204k
URL	查看原文
收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/67870
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen. Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing[J]. Journal of Materials Chemistry C,2023,11(9):3227-3234.
APA	X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen.(2023).Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing.Journal of Materials Chemistry C,11(9),3227-3234.
MLA	X. Sun, K. W. Liu, X. Chen, Q. C. Hou, Z. Cheng, J. L. Yang, Q. Ai, Y. X. Zhu, B. H. Li, L. Liu and D. Z. Shen."Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing".Journal of Materials Chemistry C 11.9(2023):3227-3234.

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