High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes

doi:10.1016/j.mtphys.2023.101034

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	High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes
	C. Zhang, K. W. Liu, Q. Ai, X. Sun, X. Chen, J. L. Yang, Y. X. Zhu, Z. Cheng, B. H. Li, L. Liu and D. Z. Shen
	2023
发表期刊	Materials Today Physics
ISSN	2542-5293
卷号	33 页码:6
摘要	Transparent ultraviolet (UV) photodetectors have attracted the increasing attention due to their giant potential in integrated transparent electronics applications. In this work, a fully transparent metal-semiconductor-metal (MSM) solar-blind UV photodetector with embedded indium-tin-oxide (ITO) electrodes based on Ga2O3 films was successfully designed and constructed for the first time. A novel method to prepare a MSM photodetector with embedded electrode structure is proposed by selective epitaxying beta-Ga2O3 thin films on c-plane sapphire substrate with ITO inter-digital electrodes prepared in advance. An ultra-low dark current of 1.6 pA, a superb UV -to-visible rejection ratio of 1.3 x 106 (R250/R400), a high specific detectivity of 7.4 x 1015 Jones and a large responsivity of 74.9 A/W can be observed in our device at 10 V, which are superior to those of other reported transparent UV photodetectors based on Ga2O3 films. The strong and uniform electrical field in beta-Ga2O3 between two adjacent embedded ITO electrodes, and the high quality of beta-Ga2O3 films should be responsible the excellent solar-blind photodetection performance. Our findings pave a new way to realize a high-performance fully transparent Ga2O3 solar-blind UV photodetector, which has the giant potential for applications in future trans-parent electronics.
DOI	10.1016/j.mtphys.2023.101034
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收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/68147
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. Zhang, K. W. Liu, Q. Ai, X. Sun, X. Chen, J. L. Yang, Y. X. Zhu, Z. Cheng, B. H. Li, L. Liu and D. Z. Shen. High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes[J]. Materials Today Physics,2023,33:6.
APA	C. Zhang, K. W. Liu, Q. Ai, X. Sun, X. Chen, J. L. Yang, Y. X. Zhu, Z. Cheng, B. H. Li, L. Liu and D. Z. Shen.(2023).High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes.Materials Today Physics,33,6.
MLA	C. Zhang, K. W. Liu, Q. Ai, X. Sun, X. Chen, J. L. Yang, Y. X. Zhu, Z. Cheng, B. H. Li, L. Liu and D. Z. Shen."High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium-tin-oxide electrodes".Materials Today Physics 33(2023):6.

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